3GAP

Capping off a multi-year development process, Samsung’s foundry group sends word this morning that the company has officially kicked off production on its initial 3nm chip production line. Samsung’s 3nm process is the industry’s first commercial production process node using gate-all-around transistor (GAAFET) technology, marking a major milestone for the field of silicon lithography, and potentially giving Samsung a major boost in its efforts to compete with TSMC. The relatively spartan announcement from Samsung, which comes on the final day of Q2, announces that Samsung has begun production of chips on a GAAFET-enabled 3nm production line. The company is not disclosing the specific version of the node used here, but based on previous Samsung roadmaps, this is undoubtedly Samsung’s initial 3GAE process – essentially, Samsung’s...

Applied Materials Outlines Next-Gen Tools for 3nm and GAA Transistor Era

Last month Samsung Foundry quietly announced that it was set to begin producing chips using its 3GAE (3 nm-class, gate-all-around transistors, early) process technology in the second quarter. While...

17 by Anton Shilov on 5/12/2022

Samsung Foundry: 2nm Silicon in 2025

One of the key semiconductor technologies beyond 3D FinFET transistors are Gate-All-Around transistors, which show promise to help extend the ability to drive processors and components to higher performance...

29 by Dr. Ian Cutress on 10/6/2021

Samsung: Deployment of 3nm GAE Node on Track for 2022

Samsung Foundry has made some changes to its plans concerning its 3 nm-class process technologies that use gate-all-around (GAA) transistors, or what Samsung calls its multi-bridge channel field-effect transistors...

32 by Anton Shilov on 7/9/2021

Log in

Don't have an account? Sign up now